• DocumentCode
    3399832
  • Title

    Carbon nanostructures used in capacitive sensors as the surface increase element

  • Author

    Pekárek, Jan ; Ficek, Richard ; Vrba, Radimír ; Magát, Martin

  • Author_Institution
    Dept. of Microelectron., Brno Univ. of Technol., Brno, Czech Republic
  • fYear
    2009
  • fDate
    17-20 Sept. 2009
  • Firstpage
    323
  • Lastpage
    326
  • Abstract
    This paper describes a new approach to pressure sensor development using the capacitive principle. The novel pressure sensor consists of an elastic electrode-sensing film fabricated by a wet anisotropic etching process and a solid electrode. The capacitive sensor comprises of two high-doped silicon electrodes with multi-wall carbon nanotube (MWCNT) arrays. Between both parts of the body of the sensor there is an insulating spacer made of SIMAX® glass. The capacitive sensor takes advantage of CNT dimensions to increase the surface. It means that the CNT arrays in the capacitive sensors increase the surface of the electrodes which are similar to a plate capacitor. The CNTs were grown by plasma enhanced chemical vapor deposition (PECVD) by using iron as a catalyst in an atmospheric pressure microwave torch.
  • Keywords
    capacitive sensors; carbon nanotubes; plasma CVD coatings; pressure sensors; SIMAX® glass; atmospheric pressure microwave torch; capacitive sensors; carbon nanostructures; multiwall carbon nanotube; plasma enhanced chemical vapor deposition; pressure sensor development; solid electrode; surface increase element; wet anisotropic etching process; Anisotropic magnetoresistance; Capacitive sensors; Carbon; Chemical elements; Electrodes; Nanostructures; Sensor arrays; Sensor phenomena and characterization; Solids; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design and Technology of Electronics Packages, (SIITME) 2009 15th International Symposium for
  • Conference_Location
    Gyula
  • Print_ISBN
    978-1-4244-5132-6
  • Electronic_ISBN
    978-1-4244-5133-3
  • Type

    conf

  • DOI
    10.1109/SIITME.2009.5407352
  • Filename
    5407352