Title :
A 4 bit 5GHz R-2R Digital to Analog Converter using hetrojunction HEMT
Author :
Reddy, N. V. Uma ; Babu, Rajesh C. ; Chaitanyakumar, M.V.
Author_Institution :
VTU, Bangalore, India
Abstract :
In this paper, an InGaAs/GaAs HEMT technology is used to develop a high speed Digital to Analog Converter (DAC).The 4 bit R-2R architecture operates up to 5GHz is presented, and it shows the detailed static performance of DAC. A linear fit of the output voltage is done for calculating various parameters. It shows a very good DNL and INL, and stable offset and resolution over the frequency range up to 5 GHz.
Keywords :
III-V semiconductors; digital-analogue conversion; gallium arsenide; high electron mobility transistors; indium compounds; InGaAs-GaAs; R-2R digital-to-analog converter; frequency 5 GHz; hetrojunction HEMT; high-speed DAC; output voltage linear fit; word length 4 bit; Digital-analog conversion; Equations; Gallium arsenide; HEMTs; Linearity; Mathematical model; Radio frequency; DNL; HEMT; INL; R-2R ladder DAC;
Conference_Titel :
Emerging Trends in Communication, Control, Signal Processing & Computing Applications (C2SPCA), 2013 International Conference on
Conference_Location :
Bangalore
Print_ISBN :
978-1-4799-1082-3
DOI :
10.1109/C2SPCA.2013.6749415
