Title :
Gate-assisted lateral PNP active load for analog SiGe HBT technology
Author :
Sunderland, D.A. ; Jeng, S.-J. ; Nguyen-Ngoc, D. ; Martin, B., Jr ; Eld, E.C. ; Tewksbury, T. ; Ahlgren, D.C. ; Gilbert, M.M. ; Malinowski, J.C. ; Schonenberg, K.T. ; Stein, K.J. ; Meyerson, B.S. ; Harame, D.L.
Author_Institution :
Div. of Microelectron., IBM Corp., Hopewell Junction, NY, USA
fDate :
29 Sep-1 Oct 1996
Abstract :
This work presents the development of a gate-assisted lateral PNP as a high transconductance active load device for analog SiGe HBT technology. We discuss three distinct modes of operation, device optimization and circuit results
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; semiconductor technology; HBT technology; SiGe; device optimization; gate-assisted lateral PNP active load; high transconductance active load; operation modes; Circuits; Costs; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Microelectronics; Optimized production technology; Radio frequency; Silicon germanium; Transconductance;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3516-3
DOI :
10.1109/BIPOL.1996.553891
