An analytical damaged submicron MOSFET model for CAD applications

Author

Bouchakour, R. ; Recoules, H. ; Benzerti, W. ; Petit, H.

Author_Institution

Dept. d´´Electronique, Ecole Nat. Superieure des Telecommun., Paris, France

Volume

2

fYear

1997

fDate

3-6 Aug. 1997

Firstpage

1473

Abstract

This paper presents a generalized version of the MOS charge-sheet model which physically incorporates uniform and/or nonuniform distribution of defects along the channel into the analysis, The model has been applied to study the effect of the localized hot-carrier degradation near the drain on the electrical behavior of a short channel nMOS transistor. A good fit has been achieved between the experimental data and the simulation. In addition, two circuit simulation examples have been examined to qualitatively verify the validity of the model.

Keywords

MOS integrated circuits; MOSFET; circuit CAD; digital simulation; hot carriers; integrated circuit design; integrated circuit reliability; semiconductor device models; CAD applications; MOS charge-sheet model; circuit simulation; damaged submicron MOSFET model; electrical behavior; localized hot-carrier degradation; nonuniform distribution; short channel nMOS transistor; uniform distribution; Circuit simulation; Circuit synthesis; Degradation; Electron traps; Hot carrier effects; Hot carrier injection; Hot carriers; MOSFET circuits; Semiconductor process modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on

Print_ISBN

0-7803-3694-1

Type

conf

DOI

10.1109/MWSCAS.1997.662363

Filename

662363