Title :
A temperature dependent SPICE macro-model for power MOSFETs
Author :
Pierce, Donald G.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Abstract :
A power MOSFET SPICE macro-model suitable for use over the temperature range -55 to 125°C has been developed. The model is composed of a single parameter set with temperature dependence accessed through the SPICE.TEMP card. SPICE parameter extraction techniques for the model and model predictive accuracy are discussed. Though complex, the model and approach to parameter extraction are straightforward. As all the parameter extraction algorithms are analytic in nature, automation of the extraction process is straightforward and requires no special optimization routines. The addition of a power MOSFET model to the SPICE code would result in more robust and efficient simulations
Keywords :
SPICE; equivalent circuits; insulated gate field effect transistors; power transistors; semiconductor device models; -55 to 125 degC; AC parameters; DC parameters; SPICE macro-model; model predictive accuracy; parameter extraction; power MOSFET model; temperature dependence; Accuracy; Algorithm design and analysis; Automation; MOSFETs; Parameter extraction; Predictive models; Robustness; SPICE; Temperature dependence; Temperature distribution;
Conference_Titel :
Circuits and Systems, 1991., Proceedings of the 34th Midwest Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-0620-1
DOI :
10.1109/MWSCAS.1991.252091
