DocumentCode
3400353
Title
A new physical, quasi 3-D, compact model of lateral bipolar transistors for circuit simulation
Author
Freund, D. ; Kostka, A.
Author_Institution
Braun AG, Kronberg, Germany
fYear
1996
fDate
29 Sep-1 Oct 1996
Firstpage
31
Lastpage
34
Abstract
A new, physics-based compact model for lateral bipolar transistors with quasi-three-dimensional, analytical equations for DC-operation is presented. It covers major features of the device operation which up to now have not been included in any usual model
Keywords
bipolar analogue integrated circuits; bipolar transistors; circuit analysis computing; digital simulation; integrated circuit modelling; semiconductor device models; DC-operation; analogue circuits; analytical equations; circuit simulation; lateral bipolar transistors; physics-based compact model; quasi 3D compact model; Analog circuits; Bipolar transistors; Circuit simulation; Conformal mapping; Coupling circuits; Current density; Geometry; Integral equations; Physics; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-3516-3
Type
conf
DOI
10.1109/BIPOL.1996.553917
Filename
553917
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