Title :
A new physical, quasi 3-D, compact model of lateral bipolar transistors for circuit simulation
Author :
Freund, D. ; Kostka, A.
Author_Institution :
Braun AG, Kronberg, Germany
fDate :
29 Sep-1 Oct 1996
Abstract :
A new, physics-based compact model for lateral bipolar transistors with quasi-three-dimensional, analytical equations for DC-operation is presented. It covers major features of the device operation which up to now have not been included in any usual model
Keywords :
bipolar analogue integrated circuits; bipolar transistors; circuit analysis computing; digital simulation; integrated circuit modelling; semiconductor device models; DC-operation; analogue circuits; analytical equations; circuit simulation; lateral bipolar transistors; physics-based compact model; quasi 3D compact model; Analog circuits; Bipolar transistors; Circuit simulation; Conformal mapping; Coupling circuits; Current density; Geometry; Integral equations; Physics; Solid modeling;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3516-3
DOI :
10.1109/BIPOL.1996.553917
