DocumentCode :
3400687
Title :
The relevance of fT and fmax for the speed of a bipolar CE amplifier stage
Author :
Hurkx, G.A.M.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
fYear :
1996
fDate :
29 Sep-1 Oct 1996
Firstpage :
53
Lastpage :
56
Abstract :
Generalized expressions for the speed of a CE amplifier stage and a CML gate are derived. They are valid for an arbitrary division of R b and Cbc into internal and external components, and presented in terms of directly measurable transistor parameters (f T, fmax and fv) instead of the conventional sum of RC products. It is shown that the transistor input bandwidth fv is an important figure of merit, whereas the maximum oscillation frequency fmax is only of minor importance for high-speed low-power applications
Keywords :
amplifiers; bipolar analogue integrated circuits; CML gate; bipolar CE amplifier stage; cut-off frequency; figure of merit; high-speed low-power device; input bandwidth; maximum oscillation frequency; transistor parameters; Bandwidth; Capacitance; Circuits; Delay effects; Differential amplifiers; Electrical resistance measurement; Frequency; Genetic expression; Laboratories; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location :
Minneapolis, MN
ISSN :
1088-9299
Print_ISBN :
0-7803-3516-3
Type :
conf
DOI :
10.1109/BIPOL.1996.553935
Filename :
553935
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3400687
بازگشت