Title :
RF power large signal modeling with MEXTRAM
Author :
van Rijs, F. ; Bertonnaud, S. ; Vanoppen, R. ; Dekker, R.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
fDate :
29 Sep-1 Oct 1996
Abstract :
To describe the RF performance of double polysilicon bipolar transistors, the model MEXTRAM is used for detailed modeling of the high current effects. Parameters of MEXTRAM are extracted from only small signal and DC measurements to predict the large signal behaviour. To obtain good correspondence with RF power measurements the measurement system also needed to be modeled
Keywords :
UHF bipolar transistors; UHF measurement; elemental semiconductors; power bipolar transistors; semiconductor device models; silicon; DC measurements; MEXTRAM; RF power performance; UHF bipolar transistors; double polysilicon bipolar transistors; high current effects; large signal behaviour; large signal modeling; small signal measurements; Bipolar transistors; Cutoff frequency; Fingers; Power amplifiers; Power generation; Power measurement; Power system modeling; RF signals; Radio frequency; Silicon;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3516-3
DOI :
10.1109/BIPOL.1996.553936
