DocumentCode
3400714
Title
RF power large signal modeling with MEXTRAM
Author
van Rijs, F. ; Bertonnaud, S. ; Vanoppen, R. ; Dekker, R.
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
fYear
1996
fDate
29 Sep-1 Oct 1996
Firstpage
57
Lastpage
60
Abstract
To describe the RF performance of double polysilicon bipolar transistors, the model MEXTRAM is used for detailed modeling of the high current effects. Parameters of MEXTRAM are extracted from only small signal and DC measurements to predict the large signal behaviour. To obtain good correspondence with RF power measurements the measurement system also needed to be modeled
Keywords
UHF bipolar transistors; UHF measurement; elemental semiconductors; power bipolar transistors; semiconductor device models; silicon; DC measurements; MEXTRAM; RF power performance; UHF bipolar transistors; double polysilicon bipolar transistors; high current effects; large signal behaviour; large signal modeling; small signal measurements; Bipolar transistors; Cutoff frequency; Fingers; Power amplifiers; Power generation; Power measurement; Power system modeling; RF signals; Radio frequency; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-3516-3
Type
conf
DOI
10.1109/BIPOL.1996.553936
Filename
553936
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