Title :
A scalable high frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design
Author :
Voinigescu, S.P. ; Maliepaard, M.C. ; Schroter, M. ; Schvan, P. ; Harame, D.L.
Author_Institution :
Nortel Technol., Northern Telecom, Ottawa, Ont., Canada
fDate :
29 Sep-1 Oct 1996
Abstract :
Fully scalable, analytical HF noise parameter equations for bipolar transistors are presented and experimentally tested on high speed Si and SiGe technologies. A technique for extracting the complete set of transistor noise parameters from Y parameter measurements only is developed and verified. Finally, the usefulness of the noise model is demonstrated in the design of tuned LNAs in the 1.9 GHz, 2.4 GHz, and 5.8 GHz bands
Keywords :
UHF amplifiers; UHF bipolar transistors; UHF measurement; circuit tuning; microwave amplifiers; microwave bipolar transistors; microwave measurement; semiconductor device models; semiconductor device noise; 1.9 to 5.8 GHz; HF noise parameter equations; Si; SiGe; Y parameter measurements; bipolar transistors; low-noise amplifier design; noise model; optimal transistor sizing; scalable high frequency noise model; transistor noise parameters; tuned LNAs; Admittance; Bipolar transistors; Circuit noise; Circuit synthesis; Equations; Gallium arsenide; Integrated circuit noise; Noise figure; Noise measurement; Radio frequency;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3516-3
DOI :
10.1109/BIPOL.1996.553940
