Title :
Effect of microwave treatment on the properties of Au-TiBx-Al-Ti-n-GaN ohmic contacts
Author :
Belyaev, A.E. ; Boltovets, N.S. ; Ivanov, V.N. ; Konakova, R.V. ; Kolyadina, E.Yu. ; Kudryk, Ya.Ya. ; Matveeva, L.A. ; Milenin, V.V. ; Sheremet, V.M.
Author_Institution :
V. Lashkaryov Inst. of Semicond. Phys., NAS of Ukraine, Kiev
Abstract :
We studied the effect of microwave irradiation (frequency of 2.45 GHz, irradiance of ~1.5 W/cm2) for 2-100 s on the characteristics of Au-TiBx-Al-Ti-n-GaN contact structures. A correlation between the contact resistivity changes and wafer curvature was found. This indicates considerable effect of intrinsic stresses on contact resistivity. Relative spread of ohmic contact resistance values decreases with irradiation time. This may indicate local intrinsic stresses homogenization enhanced by microwave irradiation.
Keywords :
III-V semiconductors; aluminium; contact resistance; gallium compounds; gold; ohmic contacts; radiation effects; semiconductor-metal boundaries; titanium; titanium compounds; wide band gap semiconductors; Au-TiBx-Al-Ti-GaN; contact resistivity; frequency 2.45 GHz; intrinsic stresses; irradiation time; microwave irradiation; microwave treatment; ohmic contacts; wafer curvature; Artificial intelligence; Conductivity; Electrical resistance measurement; Electronic mail; Gallium nitride; Gold; Helium; Microwave measurements; Time measurement; Transmission lines;
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
DOI :
10.1109/CRMICO.2008.4676498
