DocumentCode
3401275
Title
Study of the improvement of the AuGeNi ohmic contacts to n-GaAs
Author
Erofeev, E.V. ; Kagadei, V.A.
Author_Institution
Res. & Production Co. Micran, Tomsk
fYear
2008
fDate
8-12 Sept. 2008
Firstpage
562
Lastpage
564
Abstract
The results of the comparative analysis of the AuGeNi ohmic contacts parameters received by the different methods of deposition are presented, the opportunity of improvement of the contactspsila parameters by introduction diffusion barrier in the structure of metallization is shown, and also influence of sulphidic treatment of GaAs surface on characteristics of the ohmic contacts is studied.
Keywords
III-V semiconductors; diffusion barriers; gallium arsenide; germanium alloys; gold alloys; metallisation; nickel alloys; ohmic contacts; semiconductor-metal boundaries; surface treatment; AuGeNi-GaAs; diffusion barrier; metallization structure; n-GaAs; ohmic contacts; surface sulphidic treatment; Annealing; Gallium arsenide; Gold; MESFETs; Metallization; Microscopy; Microwave technology; Ohmic contacts; Tellurium; Titanium alloys;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
978-966-335-166-7
Electronic_ISBN
978-966-335-169-8
Type
conf
DOI
10.1109/CRMICO.2008.4676504
Filename
4676504
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