DocumentCode :
3401475
Title :
Calculation of magnetoresistance of thin GaAs quantum wires
Author :
Pozdnyakov, D.V.
Author_Institution :
Belarus State Univ., Minsk
fYear :
2008
fDate :
8-12 Sept. 2008
Firstpage :
586
Lastpage :
587
Abstract :
The dependencies of magnetoresistance of thin GaAs quantum wires in pores of anodic Al2O3 on the induction magnitude of constant and uniform in GaAs transverse magnetic field applied to the wires have been calculated at the liquid helium temperature.
Keywords :
III-V semiconductors; alumina; gallium arsenide; magnetoresistance; porosity; semiconductor quantum wires; GaAs-Al2O3; anodic Al2O3 pores; magnetoresistance; temperature 4 K; thin quantum wires; transverse magnetic field; Gallium arsenide; Helium; IEEE catalog; Magnetoresistance; Microwave technology; Organizing; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
Type :
conf
DOI :
10.1109/CRMICO.2008.4676514
Filename :
4676514
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3401475
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