• DocumentCode
    3401475
  • Title

    Calculation of magnetoresistance of thin GaAs quantum wires

  • Author

    Pozdnyakov, D.V.

  • Author_Institution
    Belarus State Univ., Minsk
  • fYear
    2008
  • fDate
    8-12 Sept. 2008
  • Firstpage
    586
  • Lastpage
    587
  • Abstract
    The dependencies of magnetoresistance of thin GaAs quantum wires in pores of anodic Al2O3 on the induction magnitude of constant and uniform in GaAs transverse magnetic field applied to the wires have been calculated at the liquid helium temperature.
  • Keywords
    III-V semiconductors; alumina; gallium arsenide; magnetoresistance; porosity; semiconductor quantum wires; GaAs-Al2O3; anodic Al2O3 pores; magnetoresistance; temperature 4 K; thin quantum wires; transverse magnetic field; Gallium arsenide; Helium; IEEE catalog; Magnetoresistance; Microwave technology; Organizing; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-966-335-166-7
  • Electronic_ISBN
    978-966-335-169-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2008.4676514
  • Filename
    4676514
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3401475