Title :
Electron drift velocity control in transistor structure based on GaAs quantum wire
Author :
Borzdov, A.V. ; Pozdnyakov, D.V. ; Borzdov, V.M.
Author_Institution :
Belarus State Univ., Minsk
Abstract :
The Monte-Carlo simulation of electron transport in GaAs-in-Al2O3 quantum wire transistor structure is performed with account of electron scattering by the localized acoustic and polar optical phonons and surface roughness. The dependencies of electron drift velocity on the longitudinal electric field strength at 77 and 300 K are calculated. The possibility of electron drift velocity control via the variation of the gate potentials leading to change in electron scattering rates is investigated.
Keywords :
III-V semiconductors; Monte Carlo methods; gallium arsenide; phonons; quantum well devices; semiconductor device models; semiconductor quantum wires; surface roughness; transistors; GaAs; Monte-Carlo simulation; electron drift velocity control; electron scattering rates; electron transport; gate potentials; localized acoustic phonon; longitudinal electric field strength; polar optical phonon; quantum wire transistor structure; surface roughness; temperature 300 K; temperature 77 K; Acoustic scattering; Electron mobility; Electron optics; Gallium arsenide; Optical scattering; Particle scattering; Phonons; Rough surfaces; Velocity control; Wire;
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
DOI :
10.1109/CRMICO.2008.4676515
