Optimum load impedance for full-bridged MOS-FET power inverter operating at 1.0 MHz to 2.5 MHz

Author

Suzuki, Taiju ; Ikeda, Hiroaki ; Yoshida, Hirofumi ; Shinohara, Shigenobu

Author_Institution

Shizuoka Univ., Hamamatsu, Japan

fYear

1991

fDate

14-17 May 1991

Firstpage

174

Abstract

Experiments were conducted to determine the optimum load impedance of full-bridged MOSFET power inverters of the voltage-fed type operating at 1.0 MHz to 2.5 MHz. The DC-to-RF power conversion efficiency was 74.3% and the RF output power was 572 W at 1.0 MHz when the load impedance was optimum at 25.0 Ω and when the DC input voltage was 140 V. The DC-to-RF power conversion efficiency was 71.8% and the RF output power was 955 W at 2.5 MHz when the load impedance was optimum at 12.5 Ω and when the DC input voltage was 140 V

Keywords

bridge circuits; insulated gate field effect transistors; invertors; power electronics; power transistors; 1 to 2.5 MHz; 140 V; 25 to 12.5 ohm; 572 to 955 W; 74.3 to 71.8 percent; DC input voltage; DC-to-RF power conversion efficiency; ON resistance; RF output power; drain-source capacitance; full-bridged MOSFET power inverters; load impedance; optimum load impedance; Capacitance; Circuits; FETs; Feeds; Impedance; Inverters; Power conversion; Power generation; Radio frequency; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1991., Proceedings of the 34th Midwest Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-0620-1

Type

conf

DOI

10.1109/MWSCAS.1991.252153

Filename

252153