Planarised InP regrowths around tall and narrow mesas using chloride-MOVPE [and electroabsorption modulator fabrication]

Author

Perrin, S.D. ; Moore, R.T. ; Moodie, D.G. ; Rogers, D.C. ; Barrell, A.H.

Author_Institution

British Telecom Res. Labs., Ipswich, UK

fYear

1999

fDate

1999

Firstpage

63

Lastpage

66

Abstract

The introduction of PCl₃ into the MOVPE growth process dramatically alters the regrowth of InP around tall, narrow mesas. Planar regions 48 μm wide have been grown around vertical-walled mesas only 1 μm wide. Polycrystalline deposits are completely eliminated from the silica mask. Furthermore, this process has simultaneously produced planarised infilling growth of orthogonal channels. Electroabsorption modulators with low device capacitance and high modulation depth have been fabricated using this process, and have been used in systems operating at 100 Gbit/s

Keywords

III-V semiconductors; MOCVD; Mach-Zehnder interferometers; electro-optical modulation; electroabsorption; indium compounds; iron; semiconductor epitaxial layers; semiconductor growth; surface treatment; vapour phase epitaxial growth; 1 micron; 48 micron; InP:Fe; Mach-Zehnder interferometer; chloride-MOVPE; electroabsorption modulators; high modulation depth; low device capacitance; orthogonal channels; passive cladding; planarised infilling growth; planarised regrowths; tall narrow mesas; vertical-walled mesas; Epitaxial growth; Epitaxial layers; Indium phosphide; Laboratories; Optical device fabrication; Optical modulation; Optoelectronic devices; Parasitic capacitance; Quantum well devices; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773635

Filename

773635