Composite-channel InP HEMT for W-band power amplifiers

Author

Chen, Y.C. ; Chin, P. ; Ingram, D. ; Lai, R. ; Grundbacher, R. ; Barsky, M. ; Block, T. ; Wojtowicz, M. ; Tran, L. ; Medvedev, V. ; Yen, H.C. ; Streit, D.C. ; Brown, A.

Author_Institution

Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1999

fDate

1999

Firstpage

305

Lastpage

306

Abstract

We have developed composite-channel InP-InGaAs HEMTs for W-band high power amplifier applications. The optimized 0.15 μm T-gate device demonstrated state-of-the-art g_m-I_max combination. It also showed a 1.5 V improvement in on-state and off-state breakdown over the conventional InP HEMT without degrading the RF performance. A two-stage MMIC power amplifier built on this device delivered 25 dBm output power with 17 dB linear gain at 94 GHz as measured on wafer. To our knowledge, this is the first demonstration of composite-channel HEMT at 94 GHz with excellent power performance

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave power amplifiers; 0.15 micron; 17 dB; 94 GHz; InP-InGaAs; W-band power amplifiers; composite-channel HEMT; high power amplifier applications; linear gain; off-state breakdown; output power; two-stage MMIC power amplifier; Degradation; Electric breakdown; HEMTs; High power amplifiers; Indium phosphide; MMICs; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773695

Filename

773695