DocumentCode :
3401655
Title :
Nanotechnology of CoSi2 epitaxial film formation on monocryctalline silicon
Author :
Makogon, Yu.N. ; Pavlova, Elmira P. ; Sidorenko, SI I. ; Beddies, G.
Author_Institution :
Nat. Tech. Univ. of Ukraine, Kiev
fYear :
2008
fDate :
8-12 Sept. 2008
Firstpage :
610
Lastpage :
611
Abstract :
The research is devoted to the decision material science and technological task of improvement of the structural quality of active region in which ultrahigh frequency (UHF) oscillations are generated directly. It is shown the possibility of formation epitaxial CoSi2 film on monocrystalline Si (001) using the diffusion-controlling Ti and SiO2 layers between the Co film and Si substrate.
Keywords :
cobalt compounds; diffusion; epitaxial growth; nanotechnology; CoSi2; Si; diffusion-controlling layers; epitaxial film formation; monocrystalline silicon; nanotechnology; ultrahigh frequency oscillations; Chemical technology; Gallium arsenide; Helium; Nanotechnology; Physics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
Type :
conf
DOI :
10.1109/CRMICO.2008.4676525
Filename :
4676525
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3401655
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