Title :
InP-based thermionic coolers
Author :
Shakouri, Ali ; LaBounty, Chris ; Abraham, Patrick ; Piprek, Joachim ; Bowers, John E.
Author_Institution :
Sch. of Eng., California Univ., Santa Cruz, CA, USA
Abstract :
Thermoelectric coolers are important elements of many optoelectronic systems. Current commercial coolers are based on non-conventional semiconductors such as BiTe. In this paper we analyze the prospect of InP based material to fabricate coolers that can be integrated with optoelectronic components. Experimental results are shown where thermionic emission current in InGaAs/InGaAsP heterostructures is used to enhance the cooling power of conventional bulk material. About one degree cooling over 1 μm thick barrier is observed (i.e. a cooling power of 200-300 W/cm2). Calculations for InGaAs/InAlAs superlattices show that single stage cooling by as much as 20-30 degrees should be possible
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; semiconductor device packaging; semiconductor superlattices; thermionic electron emission; thermoelectricity; InAlAs; InGaAs; InGaAs/InAlAs superlattices; InGaAs/InGaAsP heterostructures; InGaAsP; InP-based thermionic coolers; cooling power; integrated optoelectronic components; optoelectronic systems; single stage cooling; thermionic emission current; thermoelectric coolers; Anodes; Cathodes; Conducting materials; Cooling; Heat sinks; Tellurium; Temperature; Thermal conductivity; Thermionic emission; Thermoelectricity;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773733
