Preparation and characterization of InGaAs quantum wires on V-groove patterned InP

Author

Schrimpf, T. ; Piester, D. ; Wehmann, H.-H. ; Bonsch, P. ; Wullner, D. ; Schlachetzki, A. ; Mendorf, C. ; Lakner, H.

Author_Institution

Inst. fur Halbleitertech., Tech. Univ. Braunschweig, Germany

fYear

1999

fDate

1999

Firstpage

507

Lastpage

510

Abstract

We report on the characterization of InGaAs quantum wells (QWL) and wires (QWR) on V-groove patterned InP substrates. The quality of the QWL on the (100)-surface between the grooves is discussed concerning different sample preparation methods. The material composition and the thickness of these QWL is determined. The geometrical shape of the QWR in the tip of the V-grooves is measured by atomic-force microscopy (AFM) and compared with transmission-electron microscopy (TEM). The dependence of the QWR photoluminescence (PL) on sample temperature is studied

Keywords

III-V semiconductors; MOCVD; atomic force microscopy; gallium arsenide; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wells; semiconductor quantum wires; transmission electron microscopy; vapour phase epitaxial growth; (100)-surface; AFM; InGaAs; InGaAs quantum wells; InGaAs quantum wires; InP; MOVPE; TEM; V-groove patterned InP; atomic-force microscopy; characterization; geometrical shape; material composition; photoluminescence; preparation; sample preparation methods; sample temperature; transmission-electron microscopy; Atomic force microscopy; Atomic measurements; Composite materials; Indium gallium arsenide; Indium phosphide; Photoluminescence; Shape measurement; Temperature dependence; Transmission electron microscopy; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773744

Filename

773744