From photonic dots to photonic crystals-Status and potential of semiconductor systems with taylored photonic states

Author

Forchel, A. ; Bayer, M. ; Reithmaier, J.P. ; Reinecke, T.L.

Author_Institution

Dept. of Tech. Phys., Wurzburg Univ., Germany

fYear

1999

fDate

1999

Firstpage

563

Lastpage

564

Abstract

We review the status of current realizations of photonic band gap systems for the optical wavelength range. Furthermore results of an approach developed by us based on the controlled combination of elementary cells with 3D photonic confinement (photonic dots) will be presented. We have investigated size confinement and interaction effects of optical modes in InGaAs/(Al)GaAs microcavities with dimensional optical confinement (photonic dots)

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; photonic band gap; 3D photonic confinement; InGaAs-AlGaAs; InGaAs/(Al)GaAs microcavities; elementary cells; interaction effects; optical modes; optical wavelength range; photonic band gap systems; photonic crystals; photonic dots; photonic states; review; semiconductor systems; size confinement; Mirrors; Optical control; Optical refraction; Optical resonators; Optical variables control; Optical waveguides; Photonic band gap; Photonic crystals; Stimulated emission; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773757

Filename

773757