• DocumentCode
    3401742
  • Title

    Resonant tunneling diode based on nitride gallium nanostructural cathode

  • Author

    Goncharuk, M.N. ; Karushkin, F.N.

  • Author_Institution
    SRI Orion, Kiev
  • fYear
    2008
  • fDate
    8-12 Sept. 2008
  • Firstpage
    622
  • Lastpage
    623
  • Abstract
    Microwave characteristics of a new type of a resonant tunneling diode (RTD) based on GaN nanostructural cathode with two-layer AlxGa1-xN-GaN coating are investigated theoretically in framework the model of vacuum RTD . Optimum parameters of cathode coating layers were found at which the upper frequency of diode negative conductance band is in sub-millimeter range of wave length.
  • Keywords
    III-V semiconductors; aluminium compounds; cathodes; gallium compounds; resonant tunnelling diodes; submillimetre wave diodes; AlGaN-GaN; cathode coating layers; nanostructural cathode; negative conductance band; resonant tunneling diode; two-layer AlxGa1-xN-GaN coating; Anodes; Cathodes; Diodes; Gallium arsenide; Gallium nitride; Helium; Hidden Markov models; III-V semiconductor materials; Resonant tunneling devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-966-335-166-7
  • Electronic_ISBN
    978-966-335-169-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2008.4676530
  • Filename
    4676530
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3401742