Title :
CdTe detectors´ response to irradiation with high-energy gamma-rays
Author :
Chirco, P. ; Caroli, E. ; Cavallini, A. ; Dusi, W. ; Fraboni, B. ; Hage-Ali, M. ; Morigi, M.P. ; Siffert, P. ; Zanarini, M.
Author_Institution :
Dept. of Phys., Bologna Univ., Italy
Abstract :
In recent years the performance of room-temperature semiconductor detectors such as CdTe are improved and they are now suitable candidates for several applications. However, some key parameters that can severely affect such performances have not been measured in detail yet. We have extended previous studies on the radiation damage of a set of CdTe detectors irradiated in a 60Co gamma-cell in a wide range of doses. A full characterization of the performance of irradiated detectors has been obtained by means of spectroscopic, electrostatic, photo-induced current transient spectroscopy and photo-deep level transient spectroscopy measurements to quote the energy resolution, the leakage current, the activation energy and capture cross-section of deep level defects, respectively
Keywords :
II-VI semiconductors; cadmium compounds; deep level transient spectroscopy; gamma-ray effects; leakage currents; semiconductor counters; visible spectroscopy; 60Co gamma-cell; CdTe; CdTe detectors; activation energy; capture cross-section; deep level defects; electrostatic measurements; energy resolution; high-energy gamma-ray irradiation; leakage current; photo-deep level transient spectroscopy measurements; photo-induced current transient spectroscopy; room-temperature semiconductor detectors; spectroscopic measurements; Current measurement; Electrostatics; Gamma ray detection; Gamma ray detectors; Gas detectors; Leak detection; Performance evaluation; Radiation detectors; Semiconductor radiation detectors; Spectroscopy;
Conference_Titel :
Nuclear Science Symposium, 1998. Conference Record. 1998 IEEE
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5021-9
DOI :
10.1109/NSSMIC.1998.774307
