• DocumentCode
    3402164
  • Title

    Substrate batch effect on GaAs MESFET characteristics under ultra-short pulses exposure

  • Author

    Bobreshov, A.M. ; Korovchenko, I.S. ; Stepkin, V.A. ; Uskov, G.K.

  • Author_Institution
    Voronezh State Univ., Voronezh
  • fYear
    2008
  • fDate
    8-12 Sept. 2008
  • Firstpage
    672
  • Lastpage
    673
  • Abstract
    Experimental investigation of GaAs MESFET substrate batch effect on characteristics of ultra-short pulses exposure was carried out. This effect was developed and described.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; GaAs; MESFET; ultra-short pulses exposure; Chromium; Gallium arsenide; MESFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-966-335-166-7
  • Electronic_ISBN
    978-966-335-169-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2008.4676551
  • Filename
    4676551
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3402164