DocumentCode
3402179
Title
FET stability criteria dependences calculation at influence of video and radio pressure impulses
Author
Unzhakov, D.A. ; Zuev, S.A. ; Starostenko, V.V. ; Shadrin, A.A. ; Gribski, M.V.
Author_Institution
Vernadsky Tavrical Nat. Univ., Simferopol
fYear
2008
fDate
8-12 Sept. 2008
Firstpage
674
Lastpage
675
Abstract
The results of influence video- and radio impulses of the pressure leading thermal breakdown research on field transistors Shottki are resulted. Device life time dependences on a drain pressure are received.
Keywords
field effect transistors; radiocommunication; semiconductor device breakdown; semiconductor device reliability; stability; thermal stresses; video signals; FET stability; Schottky field effect transistors; radio pressure impulse; thermal breakdown; video pressure impulse; FETs; Gallium arsenide; Helium; IEEE catalog; Microwave technology; Organizing; Stability criteria;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
978-966-335-166-7
Electronic_ISBN
978-966-335-169-8
Type
conf
DOI
10.1109/CRMICO.2008.4676552
Filename
4676552
Link To Document