Title :
An ultra low voltage ultra high gain CMOS LNA using forward body biasing technique
Author :
Kargaran, E. ; Nabovati, Ghazal ; Baghbanmanesh, M.R. ; Mafinezhad, K. ; Nabovati, H.
Author_Institution :
Microelectron. Lab., Sadjad Inst. of Higher Educ., Mashhad, Iran
Abstract :
A fully integrated 1.5 GHz low noise amplifier suitable for ultra-low voltage applications is designed and simulated in a standard 0.18μm CMOS technology. Using the folded cascode topology and forward body biasing technique, the proposed LNA works at a very low supply voltage and low power consumption. The proposed LNA has a power gain (S21) of 22 dB with a noise figure of 1.9 dB, while consuming 2.5mW dc power with an ultra low supply voltage of 0.5 V.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; integrated circuit design; low noise amplifiers; low-power electronics; folded cascode topology; forward body biasing technique; frequency 1.5 GHz; gain 22 dB; low noise amplifier; noise figure 1.9 dB; power 2.5 mW; size 0.18 mum; ultralow-voltage ultrahigh-gain CMOS LNA; voltage 0.5 V; Forward body biasing; folded cascade; low noise amplifier (LNA); low power; ultra high gain; ultra low voltage;
Conference_Titel :
Circuits and Systems (MWSCAS), 2011 IEEE 54th International Midwest Symposium on
Conference_Location :
Seoul
Print_ISBN :
978-1-61284-856-3
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2011.6026335
