Tunable, low-power, high-gain Transimpedance amplifier for fNIRS photoreceiver front-end

Author

Kamrani, Ehsan ; Sultana, Ayesha ; Sawan, Mohamad

Author_Institution

Electr. Eng. Dept., Ecole Polytech., Montreal, QC, Canada

fYear

2011

fDate

7-10 Aug. 2011

Firstpage

1

Lastpage

4

Abstract

We present in this paper a new Transimpedance Amplifier (TIA) for photoreceiver front-end circuit designed using 0.35 μm CMOS technology to be used in a functional near infrared spectroscopy (fNIRS) system. The main advantages of this circuit are low-power consumption (0.01 mW and 0.3 mW at 1 V and 3 V bias voltages) and high transimpedance gain (0.1 to 250 MV/A) accompanying with the tunable high bandwidth (1 kHz to 1 GHz), high-speed data rate and very low input and output noise, 1 fA/√Hz and 2 μV/√Hz respectively. The post-layout simulation results confirm the excellent performance of the proposed design compared to latest available photoreceivers.

Keywords

CMOS analogue integrated circuits; infrared spectroscopy; low-power electronics; operational amplifiers; optical receivers; CMOS technology; TIA; bandwidth 1 GHz; bandwidth 1 kHz; fNIRS photoreceiver front-end circuit; functional near infrared spectroscopy; high-gain transimpedance amplifier; low-power consumption; power 0.01 mW; power 0.3 mW; size 0.35 mum; voltage 1 V; voltage 3 V; CMOS integrated circuits; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2011 IEEE 54th International Midwest Symposium on

Conference_Location

Seoul

ISSN

1548-3746

Print_ISBN

978-1-61284-856-3

Electronic_ISBN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2011.6026338

Filename

6026338