Title :
High-Power Pulse Semiconductor Laser-Thyristor Emitting at 900-nm Wavelength
Author :
Slipchenko, Sergey O. ; Podoskin, Aleksandr A. ; Rozhkov, Alexsander V. ; Pikhtin, Nikita A. ; Tarasov, Ilya S. ; Bagaev, Timur A. ; Zverkov, M.V. ; Konyaev, V.P. ; Kurniavko, Y.V. ; Ladugin, Maxim A. ; Marmalyuk, Aleksandr A. ; Padalitsa, Anatoliy A. ; S
Author_Institution :
Centre of Nanoheterostructure Phys., Ioffe Phys.-Tech. Inst., St. Petersburg, Russia
Abstract :
High-power pulse semiconductor lasers based on epitaxially integrated thyristor heterostructures were developed. The possibility of generating high-power laser light pulses with duration on the order of 100 ns at control signal amplitude on the order of 40-100 mA at extremely low turn-on thyristor voltage of 10 V was demonstrated. The values reached for the peak pulse optical power and peak pulse current were 28 W and 37 A, respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; laser transitions; optical pulse generation; semiconductor lasers; thyristors; AlGaAs; control signal amplitude; current 37 A; current 40 mA to 100 mA; epitaxially integrated thyristor heterostructures; high-power laser light pulse generation; high-power pulse semiconductor laser-thyristor; peak pulse current; peak pulse optical power; power 28 W; turn-on thyristor voltage; voltage 10 V; wavelength 900 nm; Optical pulses; Optical pumping; Optical switches; Power lasers; Semiconductor lasers; Thyristors; Laser-thyristor; semiconductor laser; thyristor heterostructure;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2013.2272801
