EUV and SXR sources based on discharge produced plasma

Author

Hotta, Eiki ; Sakai, Yusuke ; Zhu, Qiushi ; Huang, Bin ; Kumai, Hideaki ; Watanabe, Masato

Author_Institution

Dept. of Energy Sci., Tokyo Inst. of Technol., Yokohama, Japan

fYear

2011

fDate

12-16 Oct. 2011

Firstpage

4

Lastpage

7

Abstract

EUV sources based on discharge produced plasma (DPP), one of which is based on xenon gas jet discharge and the other is based on laser assisted tin discharge, are being developed for the next generation lithography. To get a high power source demanded by manufacturers, the understanding of pinch dynamics corresponding to emission is important and hence fundamental investigation, such as the simulation of gas density distribution or the measurement of electron temperature and density, is conducted. Soft X-ray laser using recombination scheme is also being studied to realize a shorter wavelength nitrogen laser at 13.4 nm. The results of spectroscopic measurement are shown.

Keywords

X-ray lasers; discharges (electric); pinch effect; plasma X-ray sources; ultraviolet sources; EUV sources; SXR sources; discharge produced plasma; electron density; electron temperature; lithography; nitrogen laser; pinch dynamics; soft X-ray laser; spectroscopic measurement; wavelength 13.4 nm; xenon gas jet discharge; Discharges; Electrodes; Gas lasers; Plasma temperature; Tin; X-ray lasers; DPP; EUV source; SXR laser; Z-pinch; capillary; recombination; spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics and Microelectronics Technology (AISOMT), 2011 Academic International Symposium on

Conference_Location

Harbin

Print_ISBN

978-1-4577-0794-0

Type

conf

DOI

10.1109/AISMOT.2011.6159301

Filename

6159301