Title :
Novel passivation process for GaAs(110) surface with sulf-solutions
Author :
Lu, Zhou ; Yunhua, Wang ; Baoshan, Jia ; Duanyuan, Bai ; Jing, Xu ; Xin, Gao ; Baoxue, Bo
Author_Institution :
State Key Lab. of High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
Abstract :
In order to enhance the effect of sulfur passivation, the influence of solution polarity on the passivation was investigated; With the following conclusion: the smaller polarity of the solution, the better effect of the passivation. A novel passivation solution made up of (NH4)2S+Se+t-C4H9OH has been prepared. The PL spectrum intensity of the samples treated by (NH4)2S+Se+t-C4H9OH is 23 times stronger than that of non-passivated samples and more efficient than (NH4)2S passivation alone. This result indicates that (NH4)2S+Se+t-C4H9OH solution has a better passivation effect on GaAs(110) surface.
Keywords :
III-V semiconductors; gallium arsenide; passivation; photoluminescence; spectral line intensity; sulphur; GaAs; PL spectrum; sulf-solutions; sulfur passivation; Gallium arsenide; Indium gallium arsenide; Optical surface waves; Passivation; Semiconductor lasers; Solvents; GaAs; photoluminescence; polarity; sulphur passivation;
Conference_Titel :
Optoelectronics and Microelectronics Technology (AISOMT), 2011 Academic International Symposium on
Conference_Location :
Harbin
Print_ISBN :
978-1-4577-0794-0
DOI :
10.1109/AISMOT.2011.6159309
