Indium phosphide based micro optoelectro mechanics

Author

Hjort, K. ; Streubel, K. ; Viktorovitch, P.

Author_Institution

Mater. Sci. Div., Uppsala Univ., Sweden

fYear

1996

fDate

5-9 Aug. 1996

Firstpage

45

Lastpage

46

Abstract

In micro optoelectronical applications like lasers, photodiodes or phototransistors, III-V direct band-gap compounds are predominant. This should also be the case if micromechanics are integrated with active optoelectronic structures. Already much encouraging work has been made in GaAs based micro optoelectro mechanical systems (MOEMS). We propose that indium phosphide (InP) based surface micromachined micromechanics could also provide cost effective MOEMS, and for longer wavelengths. Application could be gas sensors, and in Fibre-to-the-House wavelength division multiplexing (WDM) 1.55 /spl mu/m telecommunication systems.

Keywords

III-V semiconductors; indium compounds; micromechanical devices; optoelectronic devices; III-V direct band-gap compound; InP; MOEMS; indium phosphide; micro optoelectro mechanical system; surface micromachining; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Laser applications; Mechanical systems; Photodiodes; Photonic band gap; Phototransistors; Surface waves; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Applications of Lasers in Materials Processing/Broadband Optical Networks/Smart Pixels/Optical MEMs and Their Applications. IEEE/LEOS 1996 Summer Topical Meetings:

Conference_Location

Keystone, CO, USA

Print_ISBN

0-7803-3175-3

Type

conf

DOI

10.1109/LEOSST.1996.540788

Filename

540788