• DocumentCode
    3403880
  • Title

    Ultra-low voltage integrated receivers in nanoscale CMOS

  • Author

    Balankutty, Ajay ; Kinget, Peter R.

  • Author_Institution
    Radio Integration Res., Intel Corp., Hillsboro, OR, USA
  • fYear
    2011
  • fDate
    7-10 Aug. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    CMOS process scaling has lead to lower supply voltages for transistors. The sub-1V supply voltage in modern CMOS nanoscale processes coupled with the need to provide highly integrated solutions in embedded applications requires us to rethink the design of analog and RF circuits. We present design techniques for RF transceivers operating from ultra voltage (ULV) supplies in standard digital processes. In this paper we systematically look at the architectural and circuit design techniques that enable the robust design of ULV wireless receivers. We will present three integrated receivers operating from 0.5-0.6V that target WPAN and wide-area cellular network applications.
  • Keywords
    CMOS integrated circuits; MOSFET; analogue integrated circuits; cellular radio; personal area networks; radio transceivers; radiofrequency integrated circuits; CMOS process scaling; RF circuits; RF transceivers; ULV wireless receivers; WPAN; analog circuits; circuit design; embedded applications; nanoscale CMOS; sub-1V supply voltage; transistors; ultra-low voltage integrated receivers; voltage 0.5 V to 0.6 V; wide-area cellular network; Biological system modeling; CMOS integrated circuits; Filtering; Mixers; Receivers; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (MWSCAS), 2011 IEEE 54th International Midwest Symposium on
  • Conference_Location
    Seoul
  • ISSN
    1548-3746
  • Print_ISBN
    978-1-61284-856-3
  • Electronic_ISBN
    1548-3746
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2011.6026383
  • Filename
    6026383