DocumentCode
3403880
Title
Ultra-low voltage integrated receivers in nanoscale CMOS
Author
Balankutty, Ajay ; Kinget, Peter R.
Author_Institution
Radio Integration Res., Intel Corp., Hillsboro, OR, USA
fYear
2011
fDate
7-10 Aug. 2011
Firstpage
1
Lastpage
4
Abstract
CMOS process scaling has lead to lower supply voltages for transistors. The sub-1V supply voltage in modern CMOS nanoscale processes coupled with the need to provide highly integrated solutions in embedded applications requires us to rethink the design of analog and RF circuits. We present design techniques for RF transceivers operating from ultra voltage (ULV) supplies in standard digital processes. In this paper we systematically look at the architectural and circuit design techniques that enable the robust design of ULV wireless receivers. We will present three integrated receivers operating from 0.5-0.6V that target WPAN and wide-area cellular network applications.
Keywords
CMOS integrated circuits; MOSFET; analogue integrated circuits; cellular radio; personal area networks; radio transceivers; radiofrequency integrated circuits; CMOS process scaling; RF circuits; RF transceivers; ULV wireless receivers; WPAN; analog circuits; circuit design; embedded applications; nanoscale CMOS; sub-1V supply voltage; transistors; ultra-low voltage integrated receivers; voltage 0.5 V to 0.6 V; wide-area cellular network; Biological system modeling; CMOS integrated circuits; Filtering; Mixers; Receivers; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (MWSCAS), 2011 IEEE 54th International Midwest Symposium on
Conference_Location
Seoul
ISSN
1548-3746
Print_ISBN
978-1-61284-856-3
Electronic_ISBN
1548-3746
Type
conf
DOI
10.1109/MWSCAS.2011.6026383
Filename
6026383
Link To Document