Composition of SiC layer grown on Si(111) substrate analyzed by plan-view energy dispersive spectroscopy

Author

Yua, L. ; Lu, Z.Z. ; Yu, L. ; Cheng, L.H. ; Cheng, W. ; Yang, Y. ; Han, P. ; Zhao, H. ; Hua, X.M. ; Xie, Z.L. ; Xiu, X.Q. ; Zhu, S.M. ; Shi, Y. ; Zhang, R. ; Zheng, Y.D.

Author_Institution

Sch. of Electron. Sci. & Eng., Nanjing Univ., Nanjing, China

fYear

2011

fDate

12-16 Oct. 2011

Firstpage

138

Lastpage

141

Abstract

In this work, the composition distribution in SiC films grown on Si(111) using chemical vapor deposition (CVD) method has been measured by the plan-view energy dispersive spectroscopy (EDS). The measuring original EDS data are modified by considering the multilayer structure and the attenuation due to the diffuse reflection at the interface of the voids. The relative error rate of the improved EDS data is reduced by ~45% comparing to the measurement result of X-ray photoelectron spectroscopy. Such a modification shows that the plan-view EDS method can be an effective way for characterizing element content of the SiC/Si structure in semi-quantitative measurement.

Keywords

X-ray chemical analysis; chemical vapour deposition; optical multilayers; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; CVD method; EDX; Si; Si(111) substrate; SiC; X-ray photoelectron spectroscopy; chemical vapor deposition; composition distribution; diffuse reflection; film growth; multilayer structure; plan-view energy dispersive spectroscopy; relative error rate; semiquantitative measurement; Atomic layer deposition; Epitaxial growth; Semiconductor device measurement; Silicon; Silicon carbide; Substrates; Temperature measurement; 3C-SiC/Si(111); CVD; EDS;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics and Microelectronics Technology (AISOMT), 2011 Academic International Symposium on

Conference_Location

Harbin

Print_ISBN

978-1-4577-0794-0

Type

conf

DOI

10.1109/AISMOT.2011.6159337

Filename

6159337