Three-dimensional photonic crystals based on III-V semiconductor at 1-2 μm wavelengths

Photonic crystal is a new type of optical material in which the refractive index changes periodically. By utilizing the photonic band gap and the defect states introduced artificially, novel scientific and engineering applications are expected such as complete control of spontaneous emission, a zero-threshold semiconductor laser, and very sharp bending of light. To extract the potential of photonic crystals as much as possible, the following requirements should be satisfied. (1) The crystals should have complete photonic band gap at optical wavelengths. (2) The introduction of an arbitrary defect state into the crystal should be possible. (3) The introduction of a high efficient light-emitter also should be possible. (4) Current flow through the crystals should be possible to excite the light-emitter electrically. Thus far, there have been very few reports on the complete photonic crystals which satisfy all the above requirements simultaneously. In this presentation, we report a complete three-dimensional photonic crystal based on III-V semiconductors, which potentially satisfies all the above requirements, in 1 to 2 μm wavelength region. It is shown that the crystal has a complete photonic band gap with a record shortest wavelength and largest band gap effect ever reported