A variable inductor using mutual-current control and application to a SiGe 4.5-GHz VCO for wide tuning range

Author

Nakamura, Takahiro ; Masuda, Toru ; Kodama, Akihiro ; Washio, Katsuyoshi

Author_Institution

Central Res. Lab., Hitachi, Ltd., Tokyo, Japan

Volume

2

fYear

2005

fDate

4-7 Dec. 2005

Abstract

A novel variable inductor using mutual current control was developed and applied to a 4.5-GHz SiGe voltage controlled oscillator (VCO). It consists of a primary inductor, a secondary inductor, and a variable capacitor, and its inductance can be tuned by adjusting the capacitance of the capacitor. It was designed for application to a proposed 4.5-GHz VCO in 0.25-μm SiGe BiCMOS technology. It exhibited a large inductance variation of 22% and a high quality factor of 24 at 4.5 GHz in electro-magnetic simulation. The VCO has a 1.2-GHz tuning range, 32% wider than that of a conventional VCO, and a low phase noise of -121.8 dBc/Hz (at a 1-MHz offset frequency).

Keywords

BiCMOS integrated circuits; Ge-Si alloys; code division multiple access; electric current control; elemental semiconductors; heterojunction bipolar transistors; inductors; voltage-controlled oscillators; 0.25 micron; 1 MHz; 1.2 GHz; 4.5 GHz; C-band; SiGe; SiGe BiCMOS technology; SiGe HBT; W-CDMA; electro-magnetic simulation; mutual-current control; variable inductor; voltage controlled oscillator; wide tuning range; BiCMOS integrated circuits; Capacitance; Capacitors; Current control; Germanium silicon alloys; Inductance; Inductors; Silicon germanium; Tuning; Voltage-controlled oscillators; C-band; SiGe HBT; VCO; W-CDMA; variable inductor; wide tuning range;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606398

Filename

1606398