Low threshold current 1.55 μm lasers using novel selective oxidation of short period superlattice

Author

Koley, B. ; Saini, S.S. ; King, O. ; Grover, R. ; Johnson, F. ; Dagenais, M.

Author_Institution

Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA

Volume

2

fYear

1999

fDate

1999

Firstpage

529

Abstract

InGaAsP-InP based injection laser diodes operating at 1.55 μm are very attractive for optical communication systems. The most common Al containing material used in InP based system is Al_yIn_1-yAs which is lattice matched to InP for y values near 0.48. Due to this low Al concentration, the oxidation rate for this material is very slow. As a result, the advantages of selectively oxidized structures can not be easily transferred to devices based on InP substrates. We propose using a short period InAs-AlAs superlattice layer as the buried oxidation layer. A short-period superlattice consisting of 2 monolayers of AlAs and 2 monolayers of InAs are grown right above the active region

Keywords

III-V semiconductors; aluminium compounds; indium compounds; laser transitions; monolayers; oxidation; semiconductor lasers; semiconductor superlattices; 1.55 mum; Al_yIn_1-yAs; AlInAs; InAs-AlAs; InGaAsP-InP; InGaAsP-InP based injection laser diodes; InP; buried oxidation layer; lattice matched; low threshold current; monolayers; oxidation rate; selective oxidation; short period InAs-AlAs superlattice layer; short period superlattice; Apertures; Coatings; Electrons; Laser modes; Oxidation; Semiconductor lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.811832

Filename

811832