Title :
Effects of emitter scaling and device biasing on millimeter-wave VCO performance in 200 GHz SiGe HBT technology
Author :
Kuo, Wei-Min Lance ; Chen, Yi-Jan Emery ; Cressler, John D. ; Freeman, Greg
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
The implication of emitter scaling and device biasing on millimeter-wave Colpitts VCO performance is presented in this paper. A comprehensive experimental investigation is carried out in a state-of-the-art 200 GHz SiGe HBT technology to explore the device-circuit interactions across a variety of VCO performance metrics. Design insights and tradeoffs for optimizing several VCO specifications, including oscillation frequency and phase noise, are given. Good agreement between theory and measurement is obtained.
Keywords :
Ge-Si alloys; bipolar MIMIC; millimetre wave oscillators; phase noise; voltage-controlled oscillators; 200 GHz; Colpitts voltage controlled oscillator; SiGe; device biasing; emitter scaling; heterojunction bipolar transistor technology; millimeter-wave voltage controlled oscillator; oscillation frequency; phase noise; Design optimization; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Measurement; Millimeter wave technology; Phase noise; Silicon germanium; Voltage-controlled oscillators;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606401
