Title :
Low threshold 630 nm band AlGaInP diode laser with AlAs native oxide current aperture
Author :
Choi, Won-Jin ; Dapkus, P.D.
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
We discuss the growth and properties of an AlGaInP edge emitting diode laser. The laser structure was grown by close space low pressure MOCVD. The typical L-I characteristics of the laser with a 4 μm current aperture are shown. The laser has a 350 μm long cavity. The threshold current is as low as 12 mA. The external differential quantum efficiency is 37.4 %. The lasing wavelength shown is 637 nm. The threshold current decreases monotonically as the aperture size decreases to 4 μm. When the aperture size reduced further, the threshold current increases
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; laser transitions; oxidation; semiconductor growth; semiconductor lasers; 12 mA; 350 mum; 37.4 percent; 4 mum; 630 nm; 637 nm; AlAs; AlAs native oxide current aperture; AlGaInP; AlGaInP edge emitting diode laser; L-I characteristics; aperture size; close space low pressure MOCVD; external differential quantum efficiency; lasing wavelength; low threshold 630 nm band AlGaInP diode laser; threshold current; Apertures; Buffer layers; Diode lasers; Gallium arsenide; Laser modes; Optical fiber communication; Oxidation; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811834
