Title :
Cavity-QED experiments on InAs quantum boxes in micropillars and microdisks
Author :
Gavral, B. ; Gérard, J.M.
Author_Institution :
France Telcom, CNET, Bagneux, France
Abstract :
In order to further demonstrate and understand spontaneous emission (SE) enhancement in solid-state microcavities, we choose to study microdisks, sustaining low V and potentially high Q "whispering gallery modes". We report the fabrication of high quality GaAs microdisks containing InAs quantum boxes (QBs), thanks to an improved process based on two-step wet-etching. Whispering gallery modes display record high Q\´s (12000 for 2 μm diameter disks instead of 3300 for the previous state of the art) corresponding to a very high Fp (~150). We also present an original characterization of the Purcell effect in continuous wave photoluminescence. In our structures, the number of QBs coupled to a given mode is not large enough to sustain lasing. When we raise the excitation power, the emission related to the fundamental optical transition of a QB thus saturates when we inject more than one electron-hole pair per lifetime. This behavior is observed for on-resonance as well as off-resonance QBs. However the beginning of the saturation occurs for a much higher pumping power when QBs are resonantly coupled to a cavity mode, which confirms that their radiative lifetime is much shorter due to the Purcell effect. For micropillars, these cw experiments confirm the previously reported results of time-resolved experiments. For microdisks, due to a much larger Purcell factor, we witnessed a SE enhancement as large as 20 for the best structures. The magnitude of this effect is well understood when considering the spatial and spectral distribution of the QBs
Keywords :
III-V semiconductors; etching; indium compounds; micro-optics; optical resonators; optical saturation; photoluminescence; quantum electrodynamics; quantum optics; radiative lifetimes; semiconductor quantum dots; spontaneous emission; 2 mum; GaAs; InAs; InAs quantum boxes; Purcell effect; cavity-QED experiments; continuous wave photoluminescence; electron-hole pair; excitation power; fabrication; fundamental optical transition; high Q; high quality GaAs microdisks; lifetime; low V; microdisks; micropillars; off-resonance; on-resonance; pumping power; radiative lifetime; saturation; solid-state microcavities; spatial distribution; spectral distribution; spontaneous emission enhancement; two-step wet-etching; whispering gallery modes; Displays; Fabrication; Gallium arsenide; Microcavities; Optical pumping; Photoluminescence; Solid state circuits; Spontaneous emission; Stimulated emission; Whispering gallery modes;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811847