• DocumentCode
    3404899
  • Title

    Power dissipation at MOSFET gate port of class E amplifier

  • Author

    Kiri, Akito ; Sato, Mitsuhisa ; Kuga, Shotaro ; Xiuqin Wei ; Suetsugu, Tadashi

  • Author_Institution
    Dept. of Electron. Eng. & Comput. Sci., Fukuoka Univ., Fukuoka, Japan
  • fYear
    2013
  • fDate
    20-23 Oct. 2013
  • Firstpage
    326
  • Lastpage
    329
  • Abstract
    In this paper, gate port power dissipation of class E amplifier is obtained as a function of amplitude and offset of gate signal with PSpice simulation.
  • Keywords
    MOSFET circuits; SPICE; amplifiers; MOSFET gate port; PSpice simulation; class E amplifier; gate port power dissipation; gate signal offset; Logic gates; PSpice simulation; class E amplifier; gate port; gate signal; power dissipation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Renewable Energy Research and Applications (ICRERA), 2013 International Conference on
  • Conference_Location
    Madrid
  • Type

    conf

  • DOI
    10.1109/ICRERA.2013.6749774
  • Filename
    6749774
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3404899