Title :
Detection of sub-terahertz radiation using proton implanted GaAs
Author :
Wong, C.S. ; Tsang, H.K.
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, Hong Kong
Abstract :
We compared the performance of proton implanted GaAs and LT-GaAs for the detection of millimetre waves by photoconductive sampling. We found that the proton-implanted GaAs detector produces a 7 dB better signal to noise ratio than the LT-GaAs detector. The short carrier lifetime makes proton-damaged GaAs an attractive material for terahertz applications
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; ion implantation; microwave photonics; millimetre wave detectors; photoconducting devices; proton effects; GaAs; millimetre waves; photoconductive sampling; proton implanted GaAs; proton-damaged GaAs; short carrier lifetime; signal to noise ratio; sub-terahertz radiation detection; Dipole antennas; Electrodes; Gallium arsenide; Laser excitation; Optical pulse generation; Optical pulses; Photoconducting materials; Probes; Protons; Radiation detectors;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811855
