Strong enhancement of THz radiation from InAs surfaces under magnetic fields at low temperatures

Author

Hangyo, Masanori ; Migita, Masataka ; Nakayama, Kouichi ; Tonouchi, Masayoshi

Author_Institution

Res. Center for Supercond. Mater. & Electron., Osaka Univ., Japan

Volume

2

fYear

1999

fDate

1999

Firstpage

572

Abstract

THz radiation has been observed from various semiconductor surfaces by exciting with femtosecond laser pulses. We report the magnetic field and temperature conditions for the strongest THz radiation from the (111) InAs surface up to 5 T and down to 10 K. We also measured the spectral intensity of the THz radiation by inserting a Martin-Puplett type interferometer between the magnet and the bolometer. We found that the relative intensity of the higher frequency spectral components increases at high magnetic fields. This result may be explained by the increased acceleration of the electrons in the higher magnetic fields

Keywords

III-V semiconductors; electromagnetic wave interferometers; indium compounds; microwave photonics; photoelectromagnetic effects; submillimetre wave generation; submillimetre wave measurement; (111) InAs surface; 10 K; 5 T; InAs; Martin-Puplett type interferometer; THz radiation strong enhancement; bolometer; electron increased acceleration; femtosecond laser pulses; high magnetic fields; higher frequency spectral components; low temperatures; magnet; magnetic fields; relative intensity; semiconductor surfaces; spectral intensity; Acceleration; Bolometers; Electrons; Frequency; Magnetic field measurement; Magnetic fields; Optical pulses; Semiconductor lasers; Surface emitting lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.811856

Filename

811856