Terahertz generation in high purity semiconductors via 3 wave DFG and cross-reststrahlenband PM

Author

Herman, Gregory S.

Author_Institution

Sci. Appl. Int. Corp., Hampton, VA, USA

Volume

2

fYear

1999

fDate

1999

Firstpage

574

Abstract

Difference frequency generation is being used in undoped, high-resistivity GaP to generate a tunable far-infrared, or terahertz, idler wave using near-infrared pump and signal sources. We have proposed a novel phasematching technique for terahertz generation valid for DFG interactions using cross-reststrahlen band PM. The pump and signal source frequencies must be on the adjacent side of the crystal´s reststrahlen band from the idler wave frequency. The formula predicts a large, but variable, tuning range around the perfectly phasematched terahertz frequency

Keywords

III-V semiconductors; gallium compounds; microwave photonics; optical frequency conversion; optical modulation; optical phase matching; phase modulation; submillimetre wave generation; 3 wave DFG; GaP; cross-reststrahlenband PM; difference frequency generation; high purity semiconductors; idler wave frequency; near-infrared pump source; perfectly phasematched terahertz frequency; phasematching technique; signal source frequencies; terahertz generation; tunable far-infrared; tuning range; undoped high-resistivity GaP; Absorption; Coherence; Crystalline materials; Crystals; Frequency; Hydrogen; Out of order; Refractive index; Signal generators; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.811857

Filename

811857