Title :
Development of radiation-hard materials for microstrip detectors
Author :
Dubbs, T. ; Kroeger, W. ; Nissen, T. ; Pulliam, T. ; Roberts, D. ; Rowe, W.A. ; Sadrozinski, H.F.-W. ; Seiden, A. ; Thomas, B. ; Webster, A. ; Alers, G.
Author_Institution :
SCIPP, California Univ., Santa Cruz, CA, USA
Abstract :
We present the search for new detector materials, which would replace silicon as the bulk material in strip detectors for application in high radiation fields. The investigation focuses on SiC, a material with higher bandgap and thus less degradation after irradiation when compared with silicon. Both static properties like the capacitance and leakage currents and dynamic measurements of charge collection with low-noise amplifiers are presented
Keywords :
capacitance; energy gap; leakage currents; position sensitive particle detectors; semiconductor counters; silicon compounds; SiC; band gap; capacitance; charge collection; leakage currents; low-noise amplifiers; microstrip detectors; Capacitance measurement; Current measurement; Degradation; Leakage current; Microstrip; Photonic band gap; Radiation detectors; Silicon carbide; Silicon radiation detectors; Strips;
Conference_Titel :
Nuclear Science Symposium, 1998. Conference Record. 1998 IEEE
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5021-9
DOI :
10.1109/NSSMIC.1998.774823
