DocumentCode
340511
Title
Development of radiation-hard materials for microstrip detectors
Author
Dubbs, T. ; Kroeger, W. ; Nissen, T. ; Pulliam, T. ; Roberts, D. ; Rowe, W.A. ; Sadrozinski, H.F.-W. ; Seiden, A. ; Thomas, B. ; Webster, A. ; Alers, G.
Author_Institution
SCIPP, California Univ., Santa Cruz, CA, USA
Volume
1
fYear
1998
fDate
1998
Firstpage
133
Abstract
We present the search for new detector materials, which would replace silicon as the bulk material in strip detectors for application in high radiation fields. The investigation focuses on SiC, a material with higher bandgap and thus less degradation after irradiation when compared with silicon. Both static properties like the capacitance and leakage currents and dynamic measurements of charge collection with low-noise amplifiers are presented
Keywords
capacitance; energy gap; leakage currents; position sensitive particle detectors; semiconductor counters; silicon compounds; SiC; band gap; capacitance; charge collection; leakage currents; low-noise amplifiers; microstrip detectors; Capacitance measurement; Current measurement; Degradation; Leakage current; Microstrip; Photonic band gap; Radiation detectors; Silicon carbide; Silicon radiation detectors; Strips;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium, 1998. Conference Record. 1998 IEEE
Conference_Location
Toronto, Ont.
ISSN
1082-3654
Print_ISBN
0-7803-5021-9
Type
conf
DOI
10.1109/NSSMIC.1998.774823
Filename
774823
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