Title :
Intrinsic recombination coefficients in quantum well semiconductor lasers
Author :
Pika, J.M. ; Menoni, C.S. ; Temkin, H. ; Thiagarajan, P. ; Robinson, G.Y.
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO, USA
Abstract :
We show that it is possible to extract the intrinsic well lifetime and therefore the intrinsic recombination parameters from the measured carrier lifetime and spontaneous emission spectra of an InAsP-InGaAsP MQW laser. This method is based on a small signal solution to the rate equations for QW lasers which includes separate carrier levels for both the QW and barrier/SCH regions
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; spontaneous emission; InAsP-InGaAsP; InAsP-InGaAsP MQW laser; QW lasers; SCH regions; barrier regions; intrinsic recombination coefficients; intrinsic recombination parameters; intrinsic well lifetime; measured carrier lifetime; quantum well semiconductor lasers; rate equations; separate carrier levels; small signal solution; spontaneous emission spectra; Charge carrier density; Charge carrier lifetime; Equations; Laser theory; Measurement standards; Quantum well lasers; Radiative recombination; Semiconductor lasers; Temperature; Wavelength measurement;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811900
