• DocumentCode
    3405770
  • Title

    Spray pyrolized copper indium gallium sulfide abosrober layers for thin film solar cells

  • Author

    Sankir, Nurdan Demirci ; Aydin, Erdogan ; Ugur, Enes

  • Author_Institution
    Dept. of Mater. Sci. & Nanotechnol. Eng., TOBB Univ. of Econ. & Technol., Ankara, Turkey
  • fYear
    2013
  • fDate
    20-23 Oct. 2013
  • Firstpage
    559
  • Lastpage
    561
  • Abstract
    In this study, copper indium gallium sulfide (CuIn1-xGaxS2) films was deposited on glass substrates using ultrasonic spray pyrolysis technique (USP). The Ga/(In+Ga) molar ratio in the precursor solutions has been tailored to obtain the stoichiometric films. Chalcopyrite structure of the films was confirmed by XRD analysis. High absorption coefficient values have been obtained for all samples. It has been observed that the optimum Ga/(In+Ga) ratio in precursor was 0.5 for the best-performed CuInGaS2 thin films.
  • Keywords
    III-V semiconductors; X-ray diffraction; copper compounds; gallium compounds; indium compounds; pyrolysis; solar absorber-convertors; solar cells; ternary semiconductors; thin film devices; CuIn1-xGaxS2; XRD analysis; chalcopyrite structure; copper indium gallium sulfide abosrober layers; copper indium gallium sulfide films; glass substrates; high absorption coefficient values; stoichiometric films; thin film solar cells; ultrasonic spray pyrolysis technique; Gallium; Indium; Integrated optics; Optical films; Photovoltaic cells; X-ray scattering; chalcopyrite film; copper indium gallium sulfide; impact nozzle; thin film solar cells; ultrasonic spray pyrolysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Renewable Energy Research and Applications (ICRERA), 2013 International Conference on
  • Conference_Location
    Madrid
  • Type

    conf

  • DOI
    10.1109/ICRERA.2013.6749818
  • Filename
    6749818
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3405770