Title :
Monolithic integrated C-band low noise amplifier using AlGaN/graded-AlGaN/GaN HEMTs
Author :
Cheng, Zhiqun ; Cai, Yong ; Liu, Jie ; Zhou, Yugang ; Lau, Kei May ; Chen, Kevin J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
Monolithic integrated C-band low noise amplifier using 1 μm-gate AlGaN/graded-AlGaN/GaN HEMT device was designed, fabricated and characterized. The LNA demonstrated a noise figure of 2.7 dB, an associated gain of 10.8 dB, an input return loss of -5.5 dB at 6 GHz, and an output return loss of -18 dB at 7 GHz. The IIP3 of the LNA is 12 dBm at 6 GHz. The LNA with 1 μm × 100 μm device shows very high-dynamic range with decent gain and noise figure.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; integrated circuit design; integrated circuit noise; low noise amplifiers; monolithic integrated circuits; wide band gap semiconductors; 1 micron; 10.8 dB; 18 dB; 5.5 dB; 6 GHz; 7 GHz; AlGaN-GaN; HEMT; IIP3; LNA; monolithic integrated C-band low noise amplifier; noise figure; Aluminum gallium nitride; Circuit noise; Fabrication; Gallium nitride; HEMTs; Low-noise amplifiers; MODFETs; Microwave devices; Noise figure; Radio frequency;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606470
