DocumentCode
340637
Title
Thin photodiodes for a scintillator-silicon well detector
Author
Allier, C.P. ; Hollander, R.W. ; Sarro, P.M. ; van Eijk, C.W.E.
Author_Institution
Interfaculty Reactor Inst., Delft Univ. of Technol., Netherlands
Volume
1
fYear
1998
fDate
1998
Firstpage
195
Abstract
In developing position sensitive radiation sensors, e.g. for medical imaging, low-gain silicon well sensors were made for the detection of scintillation light. The 3×3 arrays include N++ NP diodes, processed in the ~12 μm thick membranes that remain after thinning of 530 μm thick (100) silicon wafers by means of a potassium hydroxide (KOH) solution. A comparison is made for the light detection efficiency of these diodes with that of a 500 μm thick PIN photodiode
Keywords
p-i-n photodiodes; silicon radiation detectors; solid scintillation detectors; KOH; Si; light detection efficiency; low-gain silicon well sensors; medical imaging; position sensitive radiation sensors; scintillator-silicon well detector; thick PIN photodiode; Biomembranes; Diodes; Etching; Image sensors; Leak detection; Noise figure; Photodiodes; Silicon; Solid scintillation detectors; Spatial resolution;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium, 1998. Conference Record. 1998 IEEE
Conference_Location
Toronto, Ont.
ISSN
1082-3654
Print_ISBN
0-7803-5021-9
Type
conf
DOI
10.1109/NSSMIC.1998.775130
Filename
775130
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