Title :
Thin photodiodes for a scintillator-silicon well detector
Author :
Allier, C.P. ; Hollander, R.W. ; Sarro, P.M. ; van Eijk, C.W.E.
Author_Institution :
Interfaculty Reactor Inst., Delft Univ. of Technol., Netherlands
Abstract :
In developing position sensitive radiation sensors, e.g. for medical imaging, low-gain silicon well sensors were made for the detection of scintillation light. The 3×3 arrays include N++ NP diodes, processed in the ~12 μm thick membranes that remain after thinning of 530 μm thick (100) silicon wafers by means of a potassium hydroxide (KOH) solution. A comparison is made for the light detection efficiency of these diodes with that of a 500 μm thick PIN photodiode
Keywords :
p-i-n photodiodes; silicon radiation detectors; solid scintillation detectors; KOH; Si; light detection efficiency; low-gain silicon well sensors; medical imaging; position sensitive radiation sensors; scintillator-silicon well detector; thick PIN photodiode; Biomembranes; Diodes; Etching; Image sensors; Leak detection; Noise figure; Photodiodes; Silicon; Solid scintillation detectors; Spatial resolution;
Conference_Titel :
Nuclear Science Symposium, 1998. Conference Record. 1998 IEEE
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5021-9
DOI :
10.1109/NSSMIC.1998.775130
