Computer aided analysis of ESD effects in dual gate MOSFET VHF amplifier

Author

Shastry, S.K. ; Hariharan, V.

Author_Institution

ISRO Satellite Centre, Bangalore, India

fYear

1990

fDate

21-23 Aug 1990

Firstpage

424

Lastpage

430

Abstract

The authors present a computer-aided analysis model for the prediction of the response of a dual gate MOSFET VHF amplifier to electrostatic discharge (ESD) induced transient electromagnetic (EM) fields. With the help of the frequency spectrum of ESD generated electric field, the frequency-dependent y-parameter set for the device, and the antenna parameters, the model predicts the time-domain response for a given tuned frequency and bandwidth of the VHF amplifier. It appears that the amplifier responds at its tuned frequency during the steep rising edge of the electric field. The amplitude of response decreases sharply with increase in distance from the ESD source

Keywords

circuit analysis computing; electromagnetic fields; electrostatic discharge; field effect transistor circuits; insulated gate field effect transistors; radiofrequency amplifiers; transients; ESD source; VHF amplifier; antenna parameters; bandwidth; computer-aided analysis model; dual gate MOSFET; electric field; electrostatic discharge; frequency spectrum; frequency-dependent y-parameter set; time-domain response; transient EM fields; tuned frequency; Computer aided analysis; Electromagnetic fields; Electromagnetic modeling; Electromagnetic transients; Electrostatic discharge; Frequency; MOSFET circuits; Predictive models; Time domain analysis; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility, 1990. Symposium Record., 1990 IEEE International Symposium on

Conference_Location

Washington, DC

Print_ISBN

0-7803-7264-6

Type

conf

DOI

10.1109/ISEMC.1990.252803

Filename

252803