A numerical study on radiation hardness of low-resistivity Si-microstrip detectors

The adoption of low-resistivity materials has been proposed has an effective mean for the optimization of the long-term radiation-hardness of silicon microstrip detectors for high-energy physics applications. A comprehensive CAD-based analysis has been carried out, comparing the performance delivered by high- and low-resistivity starting materials over the wide range of fluences and applied biases foreseen at LHC. Some encouraging results have been obtained in terms of long-term performance optimization (i.e. charge collection efficiency) using low-resistivity devices