Title :
Measurement of dose rate dependence of radiation induced damage to the current gain in bipolar transistors
Author :
Dorfan, D. ; Dubbs, T. ; Grillo, A.A. ; Rowe, W. ; Sadrozinski, H.F.-W. ; Seiden, A. ; Spencer, E. ; Stromberg, S. ; Wichmann, R. ; Ipe, N.E. ; Mao, S.
Author_Institution :
SCIPP, California Univ., Santa Cruz, CA, USA
Abstract :
We report the study of radiation induced change in the current gain of bipolar transistors for three different gamma dose rates. The dose rates differed by a factor of 60 with the lowest close to that anticipated for the LHC, and the highest at a rate we have been routinely using for radiation damage tests. The maximum dose attained was 200 kRad, which is high enough to compare with other measurements. The importance of annealing to high dose rate data is demonstrated
Keywords :
annealing; bipolar transistors; dosimetry; nuclear electronics; radiation effects; annealing; bipolar transistors; current gain; dose rate; gamma dose rates; maximum dose; radiation induced damage; Annealing; Bipolar integrated circuits; Bipolar transistors; Current measurement; Gain measurement; Large Hadron Collider; Linear accelerators; Radiation detectors; Silicon radiation detectors; System testing;
Conference_Titel :
Nuclear Science Symposium, 1998. Conference Record. 1998 IEEE
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5021-9
DOI :
10.1109/NSSMIC.1998.775155
