Measurement of dose rate dependence of radiation induced damage to the current gain in bipolar transistors

Author

Dorfan, D. ; Dubbs, T. ; Grillo, A.A. ; Rowe, W. ; Sadrozinski, H.F.-W. ; Seiden, A. ; Spencer, E. ; Stromberg, S. ; Wichmann, R. ; Ipe, N.E. ; Mao, S.

Author_Institution

SCIPP, California Univ., Santa Cruz, CA, USA

Volume

1

fYear

1998

fDate

1998

Firstpage

327

Abstract

We report the study of radiation induced change in the current gain of bipolar transistors for three different gamma dose rates. The dose rates differed by a factor of 60 with the lowest close to that anticipated for the LHC, and the highest at a rate we have been routinely using for radiation damage tests. The maximum dose attained was 200 kRad, which is high enough to compare with other measurements. The importance of annealing to high dose rate data is demonstrated

Keywords

annealing; bipolar transistors; dosimetry; nuclear electronics; radiation effects; annealing; bipolar transistors; current gain; dose rate; gamma dose rates; maximum dose; radiation induced damage; Annealing; Bipolar integrated circuits; Bipolar transistors; Current measurement; Gain measurement; Large Hadron Collider; Linear accelerators; Radiation detectors; Silicon radiation detectors; System testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1998. Conference Record. 1998 IEEE

Conference_Location

Toronto, Ont.

ISSN

1082-3654

Print_ISBN

0-7803-5021-9

Type

conf

DOI

10.1109/NSSMIC.1998.775155

Filename

775155